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1011gn - 125 e/ el/ep datasheet 125 w interrogator/transponder gan power transistor and amplifier downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 2 microsemi makes no warranty, representation, or guarantee reg arding the information contained herein or the suitability of it s products and services for any particular purpose, nor does microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. the products sold hereunder and any other produc ts sold by microsemi have been subject to limi ted testing and should not be used in conjunction with mission -c ritical equipment or applications. any performance specifications ar e believed to be reliable but are not verified, and buyer mus t conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end - products. buyer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the buyers responsibilit y to independently determine suitability of any products and to test and verify the same. the information provided by microsemi hereunder is provided as is, where is and with all faults , and the entire risk associated with such information is entirely with the b uyer. microsemi does not grant, explicitly or implicitly, to an y party any patent rights, licenses, or any ot her ip rights, whether with regard to such information itself or anythi ng described by such information. information provided in this document is proprietary to microsemi, and microsemi reserves the right to make any changes to the information in this docu ment or to any products and services at any time without notic e. about microsemi microsemi corporation (nasdaq: mscc) offers a comprehensive por tfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial m arkets. products include high - performance and radiation - hardened analog mixed - signal integrated circuits, fpgas, socs and asics; power management produc ts; timing and synchronization devices and precise time solutions, setting the world's standard for time ; voice processing devices; rf solutions; discrete components ; enterprise storage and communication solutions, security technologies and scalable anti - tamper products; ethernet solutions; power - over - ethernet ics and midspans; as well as custom design capab ilities and services. microsemi is headquartered in aliso vi ejo, calif., and has approximately 4,800 employees globally. learn more at www.microsemi.com . ?2016 microsemi corporation. all rights reserved. microsemi and the microsemi logo are registered trademarks of microsemi corporation. all other trademarks and service marks are the pr operty of their respective owners. microsemi corporate headquarters one enterprise, aliso viejo, ca 92656 usa within the usa: +1 (800) 713 - 4113 outside the usa: +1 (949) 380 - 6100 sales: +1 (949) 380 - 6136 fax: +1 (949) 215 - 4996 e- mail: sales.support@microsemi.com www.microsemi.com downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 3 revision history 1.1 revision 1.0 revision 1.0 was the first publication of this document. downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 4 contents revision history .............................................................................................................................. 3 1.1 revision 1.0 ................................................................................................................................................ 3 2 product overview .................................................................................................................... 7 2.1 applications ............................................................................................................................................... 7 2.1.1 key features ................................................................................................................................ 7 3 electrical specifications ............................................................................................................ 9 3.1 absolute maximum ratings ....................................................................................................................... 9 3.2 electrical characteristics at 25 c ............................................................................................................... 9 3.3 functional characte ristics at 25 c ............................................................................................................ 9 3.4 typical broadband performance data (128 s, 10% pulsing) .................................................................. 10 3.5 critical performance at p in = 25 dbm ....................................................................................................... 11 4 transistor impedance information ......................................................................................... 12 5 transistor test information .................................................................................................... 13 5.1 transistor test circuit diagram ................................................................................................................ 13 6 product outline and pin information ..................................................................................... 14 6.1 55 - qq common source package dimensions and pin information ......................................................... 14 6.2 55 - qqp common source package dimensions and pin information ...................................................... 15 6.3 overall pallet dimensions ........................................................................................................................ 16 downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 5 list of figures figure 1 case outlines 55 - qq common source (0.160" 0.550") .............................................................................. 7 figure 2 case outlines 55 - qqp common source (0.160" 0.230" flange) ................................................................ 7 figure 3 pallet outline 50 in/out (0.600" 1.200" 0.150") ................................................................................. 7 figure 4 typical broadband performance data graphs ............................................................................................. 10 figure 5 impedance definition ................................................................................................................................... 12 figure 6 transistor test circuit .................................................................................................................................. 13 figure 7 55 - qq package dimensions and pin information ........................................................................................ 14 figure 8 55 - qqp package dimensions and pin information ...................................................................................... 15 figure 9 pallet package dimensions .......................................................................................................................... 16 downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 6 list of tables table 1 absolute maximum ratings ............................................................................................................................ 9 table 2 typical electrical characteristics at 25 c ........................................................................................................ 9 table 3 typical functional characteristics at 25 c ...................................................................................................... 9 table 4 typical broadband performance data (128 s, 10% pulsing) ....................................................................... 10 table 5 critical performance at p in = 25 dbm ............................................................................................................ 11 table 6 component list 1011gn - 125e/el ................................................................................................................. 13 table 7 package dimensions ...................................................................................................................................... 15 downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 7 2 product overview the 1011gn - 125 e/el/ep is an internally matched, common source , class ab, gan on sic hemt transmitter driver transistor capable of providing over 18.5 db power gain and 125 w of pulsed rf output power under several pulse formats , including mode - s elm , across the 1030 to 1090 mhz band. the transistor has internal pre - match for optimal performance. th e hermetically sealed transistor is available in both the bolt - down flange 55 -q q package and the ear less solder - down flange 55 - qqp package styles , as well as mounted on a compact 50 ? in/out pallet. designed specifically for iff, mode - s, tcas , and a vionics s econdary r adar applicati ons , the transistor devices utilize all - gold metalliz ation and eutectic die attach to provide the highest reliability and superior ruggedness. export classification: ear - 99 . figure 1 case outlines 55 - qq common source (0.160" 0.550") figure 2 case outlines 55 - qqp common source ( 0.160 " 0.230 " flange ) figure 3 pallet outline 50 in/out (0.600" 1.200" 0.150") 2.1 applications the 1011gn - 125e and 1011gn - 125el transistors and the 1011gn - 125ep pallet are specifically designed for iff, mode - s, tcas , and a vionics s econdary r adar applications. 2.1.1 key features the following are the key features of the 1011gn - 125e, 1011gn - 125el, and 1011gn - 125ep products: downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 8 ? 1030 C 1090 mhz, 125 w p ulsed o utput p ower, 128 s 10% p ulsing ? common source , class ab, 50 v dd b ias voltage ? high e fficiency: >70% typical a cross the f requency b and ? extremely compact s ize ? high p ower g ain: 18.5 db t ypical ? excellent g ain f latness: 0.1 db t ypica l ? ideal for iff, mode - s, tcas , and a vionics s econdary r adar applications ? utilizes all - gold metallization and eutectic die attach for highest reliability ? 50 in /o ut lumped element , very small footprint , plug -and- play pallets available downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 9 3 electrical specifications 3.1 absolute maximum ratings the following table shows the absolute maximum ratings at 25 c unless otherwise specified. table 1 absolute maximum ratings rating value units max imum p ower d issipation device d issipation at 25 c 214 w maximum v oltage and cu rrent drain - source v oltage (v dss ) 125 v gate - source v oltage (v gs ) C 8 to 0 v maximum t emperatures storage t emperature (t stg ) C 55 to 125 c operating j unction t emperature 200 c 3.2 electrical characteristics at 25 c the following table shows the typical electrical characteristics at 25 c. table 2 typical electrical characteristics at 25 c symbol characteristics test conditions min typ max units p out output p ower p out = 2 w, freq = 1030, 1090 mhz 125 150 w g p power g ain p in = 2 w, freq = 1030, 1090 mhz 17.96 18.75 db ? d drain e fficiency p in = 2.5 w, freq = 1030, 1090 mhz 62 72 % dr droop p in = 2 w, freq = 1030, 1090 mhz 0.1 0.5 db vswr -t load m ismatch t olerance p out = 125 w, freq = 1030 mhz, 128 s - 10% 5:1 ? jc thermal r esistance 32 s , 2% duty cycle 0.68 c/w bias condition : v dd = +50 v, i dq = 60 ma constant current (v gs = C 2.0 to C 4.5 v typical) 3.3 f unctional characteristics at 25 c table 3 typical functional characteristics at 25 c symbol characteristic test conditions min typ max units i d(off) drain leakage current v gs = C8 v, v d = 125 v 12 ma i g(off) gate leakage current v gs = C8 v, v d = 0 v 4 ma downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 10 3.4 t ypical broadband performance data (128 s, 10% pulsing) table 4 typical broadband performance data (128 s, 10% pulsing) frequency p in (w) p out (w) i d (ma) i rl (db) ? d (%) g p (db) droop (db) 1030 mhz 2 150 450 C8.5 71 18.75 0.1 1090 mhz 2 148 430 C16.0 74 18.70 0.1 figure 4 typical broadband performance data graphs downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 11 3.5 c ritical performance at p in = 25 dbm table 5 critical performance at p in = 25 dbm freq (ghz) test condition p out (w) g p (db) ? d (%) droop (db) 1.03 32 s C 2% 158 19.00 79 0.05 1.03 128 s C 10% 149 18.75 71 0.10 1.03 1 ms C 10% 147 18.70 70 0.30 1.09 32 s C 2% 157 18.95 78 0.05 1.09 128 s C 10% 148 18.70 74 0.10 1.09 1 ms C 10% 146 18.65 73 0.30 downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 12 4 t ransistor impedance information the following diagram shows the transistor impedance information for 1011gn - 125e/el/ep. figure 5 impedance d efinition input matching network output matching network g s d z s o ur ce z l oad 50 ? 50 ? note : z s o ur ce is looking into the input circuit z l oad is looking into the output circuit for information about source and load impedances f or 1011gn - 125e/el/ep, contact your microsemi representative . downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 13 5 t ransistor test i nformation 5.1 t ransistor test circuit diagram figure 6 transistor test circuit the board material is roger duroid 6006, 0.250" thickness, and r = 6.15. the following table lists the components for 1011gn - 125e/el. table 6 component list 1011gn - 125e/el item description value c1 1 chip capacitor a size (atc 600s) 62 pf c2 chip capacitor a size (atc 600s ) 8.2 pf c3 chip capacitor a size (atc 600s ) 10 pf c4 1 chip capacitor a size (atc 600s ) 270 pf c5 chip capacitor b size 4.7 uf c6 chip capacitor a size (atc 600s ) 3 pf c7 chip capacitor a size (atc 600s ) 2.7 pf c8 chip capacitor a size (atc 100a) 100 pf c9 electrolytic capacitor (63 v) 100 uf r1 chip r esistor size 0603/0805 10 r2 chip r esistor size 0603/0805 5.1 r3 chip r esistor size 0603/0805 10 l1 chip r esistor size 0603/0805 4.3 nh l2 2 chip inductor size 1608 (venkel: lm ci1608 -1n2st) 1.2 nh l3 1 chip inductor size 1608 (venkel: lm ci1608 -1n2st) 1.2 nh 1. two of these are needed. 2. three of these are needed. downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 14 6 product outline and p in information the 1011gn - 125e transistor is available in the 55 - qqp case outline and the 1011gn - 125el transistor is ava ila b le in the 55 - qqp case outline. the 1011gn - 125ep is available as a pallet . all three products are configured for common source operation. 6.1 55- qq common source package dimensions and pin information figure 7 55 - qq package dimens ions and pin information pin 1: drain, pin 2: source, pin 3: gate dim millimeters tol (mm) inches tol (in.) a 13.970 0.250 0.550 0.010 b 4.570 0.250 0.160 0.010 c 3.860 0.330 0.152 0.013 d 1.270 0.130 0.050 0.005 e 1.020 0.130 0.040 0.005 f 1.700 0.130 0.067 0.005 g 0.130 0.025 0.005 0.001 h 8.130 0.250 0.320 0.010 i 45 5 45 5 j 5.080 0.250 0.200 0.010 k 2.54 dia 0.130 0.100 dia 0.005 l 1.270 0.130 0.050 0.005 m 9.530 0.130 0.375 0.005 downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 15 6.2 55- qqp common source package dimension s and pin information figure 8 55 - qqp package dimensions and pin information pin 1: drain, pin 2: source, pin 3: gate table 7 package dimensions dim millimeter s tol (mm) inches tol (in.) a 5.840 0.250 0.230 0.010 b 4.060 0.250 0.160 0.010 c 3.170 0.050 0.125 0.002 d 1.270 0.130 0.050 0.005 e 1.020 0.130 0.040 0.005 f 1.570 0.130 0.062 0.005 g 0.130 0.020 0.005 0.001 h 8.120 0.250 0.320 0.010 i 45 5 45 5 j 5.080 0.250 0.200 0.010 k 1.400 0.130 0.055 0.005 downloaded from: http:///
125 w interrogator/transponder gan power transistor and amplifier 16 6.3 overall pallet dimensions figure 9 pallet package dimensions dimensions 1.200" 0.600" 0.150" downloaded from: http:///

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